- Part Status :
- Packaging :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GET PRICE |
41,300
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|
EPC | TRANS GAN 2N-CH 30V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | ||
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GET PRICE |
26,460
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|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | ||
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74,400
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|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | |||
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35,480
One step to sell excess stocks.Or submit Qty to get quotes
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EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | |||
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GET PRICE |
52,980
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|
EPC | MOSFET 2 N-CH 30V 9.5A/38A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | ||
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34,940
One step to sell excess stocks.Or submit Qty to get quotes
|
EPC | MOSFET 2 N-CH 30V 9.5A/38A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | |||
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44,640
One step to sell excess stocks.Or submit Qty to get quotes
|
EPC | MOSFET 2 N-CH 30V 9.5A/38A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V |
