Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
IRF9953PBF
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RFQ
44,840
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Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC HEXFET® Discontinued at Digi-Key Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Standard 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V
IRF9953
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RFQ
72,420
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Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC HEXFET® Obsolete Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V
IRF7104PBF
Per Unit
$0.18
RFQ
37,480
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Infineon Technologies MOSFET 2P-CH 20V 2.3A 8-SOIC HEXFET® Not For New Designs Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 P-Channel (Dual) Logic Level Gate 20V 2.3A 250 mOhm @ 1A, 10V 3V @ 250µA 25nC @ 10V 290pF @ 15V
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