Power - Max :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
NDS9957
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RFQ
64,820
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ON Semiconductor MOSFET 2N-CH 60V 2.6A 8-SOIC - Obsolete Cut Tape (CT) - Surface Mount 8-SOIC (0.154", 3.90mm Width) 900mW 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 2.6A 160 mOhm @ 2.6A, 10V 3V @ 250µA 12nC @ 10V 200pF @ 30V
NDS9957
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RFQ
70,520
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ON Semiconductor MOSFET 2N-CH 60V 2.6A 8-SOIC - Obsolete Tape & Reel (TR) - Surface Mount 8-SOIC (0.154", 3.90mm Width) 900mW 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 2.6A 160 mOhm @ 2.6A, 10V 3V @ 250µA 12nC @ 10V 200pF @ 30V
HTMN5130SSD-13
Per Unit
$0.46
RFQ
50,960
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Diodes Incorporated MOSFET 2N-CH 55V 2.6A 8SOIC - Active Tape & Reel (TR) -55°C ~ 175°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.7W 8-SO 2 N-Channel (Dual) Standard 55V 2.6A 130 mOhm @ 3A, 10V 3V @ 250µA 8.9nC @ 10V 218.7pF @ 25V
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