Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTP8N50PM
Per Unit
$1.06
RFQ
60,120
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 500V 4A TO-220 PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 41W (Tc) N-Channel - 500V 4A (Tc) 800 mOhm @ 4A, 10V 5.5V @ 250µA 20nC @ 10V 1050pF @ 25V 10V ±30V
IXTP7N60PM
Per Unit
$0.77
RFQ
44,940
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 4A TO-220 Polar™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 41W (Tc) N-Channel - 600V 4A (Tc) 1.1 Ohm @ 3.5A, 10V 5.5V @ 100µA 20nC @ 10V 1180pF @ 25V 10V ±30V
Page 1 / 1