- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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31,360
One step to sell excess stocks.Or submit Qty to get quotes
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IXYS | MOSFET N-CH 1000V 1.5A TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 54W (Tc) | N-Channel | 1000V | 1.5A (Tc) | 11 Ohm @ 1A, 10V | 4.5V @ 25µA | 14.5nC @ 10V | 400pF @ 25V | 10V | ±30V | |||
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58,200
One step to sell excess stocks.Or submit Qty to get quotes
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IXYS | MOSFET N-CH 800V 2A TO-263 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 54W (Tc) | N-Channel | 800V | 2A (Tc) | 6.2 Ohm @ 500mA, 10V | 5.5V @ 250µA | 22nC @ 10V | 440pF @ 25V | 10V | ±20V | |||
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24,760
One step to sell excess stocks.Or submit Qty to get quotes
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IXYS | MOSFET N-CH 800V 2A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 54W (Tc) | N-Channel | 800V | 2A (Tc) | 6.2 Ohm @ 500mA, 10V | 5.5V @ 250µA | 22nC @ 10V | 440pF @ 25V | 10V | ±20V | |||
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29,560
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 1000V 1.5A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 54W (Tc) | N-Channel | 1000V | 1.5A (Tc) | 11 Ohm @ 1A, 10V | 4.5V @ 25µA | 14.5nC @ 10V | 400pF @ 25V | 10V | ±30V |
