Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFR36N60P
Per Unit
$5.46
RFQ
76,480
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 20A ISOPLUS247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ 208W (Tc) N-Channel - 600V 20A (Tc) 200 mOhm @ 18A, 10V 5V @ 4mA 102nC @ 10V 5800pF @ 25V 10V ±30V
IXFR44N50P
Per Unit
$5.46
RFQ
47,520
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 500V 24A ISOPLUS247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ 208W (Tc) N-Channel - 500V 24A (Tc) 150 mOhm @ 22A, 10V 5V @ 4mA 98nC @ 10V 5440pF @ 25V 10V ±30V
IXFR24N80P
Per Unit
$4.89
RFQ
40,060
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 800V 13A ISOPLUS247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ 208W (Tc) N-Channel - 800V 13A (Tc) 420 mOhm @ 12A, 10V 5V @ 4mA 105nC @ 10V 7200pF @ 25V 10V ±30V
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