- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
17,020
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 695W (Tc) | N-Channel | - | 150V | 400A (Tc) | 2.5 mOhm @ 200A, 10V | 4.5V @ 8mA | 365nC @ 10V | 23700pF @ 25V | 10V | ±20V | |||
|
|
42,240
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 75V 400A TO-268 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 1000W (Tc) | N-Channel | - | 75V | 400A (Tc) | 2.3 mOhm @ 100A, 10V | 4V @ 250µA | 420nC @ 10V | 24000pF @ 25V | 10V | ±20V | |||
|
|
14,720
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET 150V 400A TO-264 | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1250W (Tc) | N-Channel | - | 150V | 400A (Tc) | 3 mOhm @ 200A, 10V | 4.5V @ 8mA | 365nC @ 10V | 23.7nF @ 25V | 10V | ±20V | |||
|
|
61,460
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 75V 400A TO-247 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 1000W (Tc) | N-Channel | - | 75V | 400A (Tc) | 2.3 mOhm @ 100A, 10V | 4V @ 250µA | 420nC @ 10V | 24000pF @ 25V | 10V | ±20V |
