Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTT440N055T2
Per Unit
$5.54
RFQ
39,400
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 55V 440A TO-268 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 1000W (Tc) N-Channel - 55V 440A (Tc) 1.8 mOhm @ 100A, 10V 4V @ 250µA 405nC @ 10V 25000pF @ 25V 10V ±20V
IXTH440N055T2
Per Unit
$5.00
RFQ
45,900
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 55V 440A TO-247 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 1000W (Tc) N-Channel - 55V 440A (Tc) 1.8 mOhm @ 100A, 10V 4V @ 250µA 405nC @ 10V 25000pF @ 25V 10V ±20V
IXTT440N04T4HV
Per Unit
$4.66
RFQ
55,080
One step to sell excess stocks.Or submit Qty to get quotes
IXYS 40V/440A TRENCHT4 PWR MOSFET TO- TrenchT4™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 940W (Tc) N-Channel - 40V 440A (Tc) 1.25 mOhm @ 100A, 10V 4V @ 250µA 480nC @ 10V 26000pF @ 25V 10V ±15V
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