1 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTA1R6N100D2HV
Per Unit
$1.48
RFQ
44,100
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263HV 100W (Tc) N-Channel Depletion Mode 1000V 1.6A (Tj) 10 Ohm @ 800mA, 0V 4.5V @ 100µA 27nC @ 5V 645pF @ 10V 0V ±20V
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