Supplier Device Package :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTH80N65X2
Per Unit
$6.21
RFQ
27,440
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 80A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 890W (Tc) N-Channel - 650V 80A (Tc) 40 mOhm @ 40A, 10V 4.5V @ 4mA 144nC @ 10V 7753pF @ 25V 10V ±30V
IXFK80N65X2
Per Unit
$8.14
RFQ
52,460
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 80A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 890W (Tc) N-Channel - 650V 80A (Tc) 40 mOhm @ 40A, 10V 5.5V @ 4mA 143nC @ 10V 8245pF @ 25V 10V ±30V
IXFH80N65X2
Per Unit
$6.38
RFQ
26,180
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 80A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 890W (Tc) N-Channel - 650V 80A (Tc) 40 mOhm @ 40A, 10V 5.5V @ 4mA 143nC @ 10V 8245pF @ 25V 10V ±30V
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