Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTP1R6N100D2
Per Unit
$1.06
RFQ
16,160
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 1.6A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel Depletion Mode 1000V 1.6A (Tc) 10 Ohm @ 800mA, 0V - 27nC @ 5V 645pF @ 25V 10V ±20V
IXTA1R6N100D2
Per Unit
$1.12
RFQ
19,280
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 1.6A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 100W (Tc) N-Channel Depletion Mode 1000V 1.6A (Tc) 10 Ohm @ 800mA, 0V - 27nC @ 5V 645pF @ 25V 10V ±20V
IXTA1R6N100D2HV
Per Unit
$1.48
RFQ
44,100
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263HV 100W (Tc) N-Channel Depletion Mode 1000V 1.6A (Tj) 10 Ohm @ 800mA, 0V 4.5V @ 100µA 27nC @ 5V 645pF @ 10V 0V ±20V
IXTY1R6N100D2
Per Unit
$1.32
RFQ
25,420
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 1.6A DPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 100W (Tc) N-Channel Depletion Mode 1000V 1.6A (Tc) 10 Ohm @ 800mA, 0V - 27nC @ 5V 645pF @ 25V - ±20V
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