2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFT6N100Q
Per Unit
$5.18
RFQ
15,900
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 6A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 180W (Tc) N-Channel - 1000V 6A (Tc) 1.9 Ohm @ 3A, 10V 4.5V @ 2.5mA 48nC @ 10V 2200pF @ 25V 10V ±20V
IXFH6N100Q
Per Unit
$5.36
RFQ
53,580
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 6A TO-247AD HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 180W (Tc) N-Channel - 1000V 6A (Tc) 1.9 Ohm @ 3A, 10V 4.5V @ 2.5mA 48nC @ 10V 2200pF @ 25V 10V ±20V
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