- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
72,360
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 55V 550A SMPD | FRFET®, SupreMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 24-PowerSMD, 21 Leads | 24-SMPD | 830W (Tc) | N-Channel | - | 55V | 550A (Tc) | 1.3 mOhm @ 100A, 10V | 3.8V @ 250µA | 595nC @ 10V | 40000pF @ 25V | 10V | ±20V | |||
|
|
15,380
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 75V 465A DE-475 | GigaMOS™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DE475 | DE475 | 600W (Tc) | N-Channel | - | 75V | 465A (Tc) | 1.3 mOhm @ 100A, 10V | 4V @ 8mA | 545nC @ 10V | 41000pF @ 25V | 10V | ±20V | |||
|
|
|
20,780
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 40V 600A SMPD | FRFET®, SupreMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 24-PowerSMD, 21 Leads | 24-SMPD | 830W (Tc) | N-Channel | - | 40V | 600A (Tc) | 1.3 mOhm @ 100A, 10V | 3.5V @ 250µA | 590nC @ 10V | 40000pF @ 25V | 10V | ±20V | |||
|
|
23,660
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 55V 550A SOT-227 | GigaMOS™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 940W (Tc) | N-Channel | - | 55V | 550A (Tc) | 1.3 mOhm @ 100A, 10V | 4V @ 250µA | 595nC @ 10V | 40000pF @ 25V | 10V | ±20V |
