- Mounting Type :
- Package / Case :
- Supplier Device Package :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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26,440
One step to sell excess stocks.Or submit Qty to get quotes
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IXYS | MOSFET N-CH 100V 130A TO-263AA | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 360W (Tc) | N-Channel | - | 100V | 130A (Tc) | 9.1 mOhm @ 65A, 10V | 4.5V @ 1mA | 130nC @ 10V | 6600pF @ 25V | 10V | ±20V | |||
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23,580
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 100V 130A TO-220 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 360W (Tc) | N-Channel | - | 100V | 130A (Tc) | 9.1 mOhm @ 65A, 10V | 4.5V @ 1mA | 130nC @ 10V | 6600pF @ 25V | 10V | ±20V |
