Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$18.64
RFQ
38,220
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 250V 130A SMPD GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 24-PowerSMD, 21 Leads 24-SMPD 570W (Tc) N-Channel - 250V 132A (Tc) 13 mOhm @ 90A, 10V 5V @ 8mA 364nC @ 10V 23800pF @ 25V 10V ±20V
IXFR180N15P
Per Unit
$6.14
RFQ
65,560
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 150V 100A ISOPLUS247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 300W (Tc) N-Channel - 150V 100A (Tc) 13 mOhm @ 90A, 10V 5V @ 4mA 240nC @ 10V 7000pF @ 25V 10V ±20V
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