Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTH32N65X
Per Unit
$2.87
RFQ
44,200
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 32A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 500W (Tc) N-Channel 650V 32A (Tc) 135 mOhm @ 16A, 10V 5.5V @ 250µA 54nC @ 10V 2205pF @ 25V 10V ±30V
IXTQ32N65X
Per Unit
$2.63
RFQ
57,960
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 32A TO-3P - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 500W (Tc) N-Channel 650V 32A (Tc) 135 mOhm @ 16A, 10V 5.5V @ 250µA 54nC @ 10V 2205pF @ 25V 10V ±30V
IXTP32N65XM
Per Unit
$2.40
RFQ
12,460
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 14A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 78W (Tc) N-Channel 650V 14A (Tc) 135 mOhm @ 16A, 10V 5.5V @ 250µA 54nC @ 10V 2206pF @ 25V 10V ±30V
IXTP32N65X
Per Unit
$2.38
RFQ
61,760
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 650V 32A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 500W (Tc) N-Channel 650V 32A (Tc) 135 mOhm @ 16A, 10V 5.5V @ 250µA 54nC @ 10V 2205pF @ 25V 10V ±30V
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