Supplier Device Package :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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76,660
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IXYS MOSFET N-CH 300V 35A TO247AD HiPerFET™ Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 300W (Tc) N-Channel 300V 35A (Tc) 100 mOhm @ 17.5A, 10V 4V @ 4mA 200nC @ 10V 4800pF @ 25V 10V ±20V
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17,220
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IXYS POWER MOSFET TO-3 GigaMOS™ Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE TO-204AE 300W (Tc) N-Channel 300V 35A (Tc) 100 mOhm @ 17.5A, 10V 4V @ 250µA 220nC @ 10V 4600pF @ 25V 10V ±20V
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RFQ
29,460
One step to sell excess stocks.Or submit Qty to get quotes
IXYS POWER MOSFET TO-3 HiPerFET™ Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE TO-204AE 300W (Tc) N-Channel 300V 35A (Tc) 100 mOhm @ 17.5A, 10V 4V @ 4mA 200nC @ 10V 4800pF @ 25V 10V ±20V
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