Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFB38N100Q2
Per Unit
$19.78
RFQ
55,040
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 38A PLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 890W (Tc) N-Channel - 1000V 38A (Tc) 250 mOhm @ 19A, 10V 5.5V @ 8mA 250nC @ 10V 13500pF @ 25V 10V ±30V
IXFB70N60Q2
Per Unit
$19.39
RFQ
46,920
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 70A PLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 890W (Tc) N-Channel - 600V 70A (Tc) 88 mOhm @ 35A, 10V 5.5V @ 8mA 265nC @ 10V 12000pF @ 25V 10V ±30V
Page 1 / 1