2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFA4N100P
Per Unit
$1.33
RFQ
42,960
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 4A D2PAK HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXFA) 150W (Tc) N-Channel - 1000V 4A (Tc) 3.3 Ohm @ 2A, 10V 5V @ 250µA 26nC @ 10V 1456pF @ 25V 10V ±20V
IXFP4N100P
Per Unit
$1.29
RFQ
22,740
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 4A TO-220 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 1000V 4A (Tc) 3.3 Ohm @ 2A, 10V 5V @ 250µA 26nC @ 10V 1456pF @ 25V 10V ±20V
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