1 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFH12N100P
Per Unit
$3.02
RFQ
13,720
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 12A TO-247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 463W (Tc) N-Channel - 1000V 12A (Tc) 1.05 Ohm @ 6A, 10V 5V @ 1mA 80nC @ 10V 4080pF @ 25V 10V ±30V
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