2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$3.65
RFQ
58,140
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH HiPerFET™, TrenchT2™ Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 880W (Tc) N-Channel - 175V 150A (Tc) 12 mOhm @ 75A, 10V 4.5V @ 1mA 233nC @ 10V 14600pF @ 25V 10V ±20V
IXFH150N17T2
Per Unit
$3.59
RFQ
36,880
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 175V 150A TO-247 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 880W (Tc) N-Channel - 175V 150A (Tc) 12 mOhm @ 75A, 10V 4.5V @ 1mA 233nC @ 10V 14600pF @ 25V 10V ±20V
Page 1 / 1