Transistors - FETs, MOSFETs - Single

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3 products

PART NO.	PRICE (reference only)		STOCK	Mfr.	DESCRIPTION	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
IXTH6N100D2	Per Unit $3.62	PDF RFQ	73,920 One step to sell excess stocks.Or submit Qty to get quotes	IXYS	MOSFET N-CH 1000V 6A TO247	-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	300W (Tc)	N-Channel	Depletion Mode	1000V	6A (Tc)	2.2 Ohm @ 3A, 0V	95nC @ 5V	2650pF @ 25V	±20V
IXTA6N100D2	Per Unit $3.51	PDF RFQ	73,080 One step to sell excess stocks.Or submit Qty to get quotes	IXYS	MOSFET N-CH 1000V 6A D2PAK	-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263 (IXTA)	300W (Tc)	N-Channel	Depletion Mode	1000V	6A (Tc)	2.2 Ohm @ 3A, 0V	95nC @ 5V	2650pF @ 25V	±20V
IXTP6N100D2	Per Unit $3.44	PDF RFQ	20,040 One step to sell excess stocks.Or submit Qty to get quotes	IXYS	MOSFET N-CH 1000V 6A TO220AB	-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	Depletion Mode	1000V	6A (Tc)	2.2 Ohm @ 3A, 0V	95nC @ 5V	2650pF @ 25V	±20V