Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFN36N110P
Per Unit
$24.18
RFQ
75,100
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1100V 36A SOT-227B Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 1000W (Tc) N-Channel - 1100V 36A (Tc) 240 mOhm @ 500mA, 10V 6.5V @ 1mA 350nC @ 10V 23000pF @ 25V 10V ±30V
IXFL38N100P
Per Unit
$12.00
RFQ
32,440
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 29A I5-PAK HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUSi5-Pak™ ISOPLUSi5-Pak™ 520W (Tc) N-Channel - 1000V 29A (Tc) 230 mOhm @ 19A, 10V 6.5V @ 1mA 350nC @ 10V 24000pF @ 25V 10V ±30V
IXFN38N100P
Per Unit
$18.70
RFQ
15,120
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 38A SOT-227B HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 1000W (Tc) N-Channel - 1000V 38A (Tc) 210 mOhm @ 19A, 10V 6.5V @ 1mA 350nC @ 10V 24000pF @ 25V 10V ±30V
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