Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTA170N075T2
Per Unit
$1.31
RFQ
54,220
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 75V 170A TO-263 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 360W (Tc) N-Channel - 75V 170A (Tc) 5.4 mOhm @ 50A, 10V 4V @ 250µA 109nC @ 10V 6860pF @ 25V 10V ±20V
IXTP170N075T2
Per Unit
$1.40
RFQ
24,720
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 75V 170A TO-220 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 360W (Tc) N-Channel - 75V 170A (Tc) 5.4 mOhm @ 50A, 10V 4V @ 250µA 109nC @ 10V 6860pF @ 25V 10V ±20V
IXTA200N055T2
Per Unit
$1.64
RFQ
57,760
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 55V 200A TO-263 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 360W (Tc) N-Channel - 55V 200A (Tc) 4.2 mOhm @ 50A, 10V 4V @ 250µA 109nC @ 10V 6800pF @ 25V 10V ±20V
IXTP200N055T2
Per Unit
$1.74
RFQ
23,920
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 55V 200A TO-220 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 360W (Tc) N-Channel - 55V 200A (Tc) 4.2 mOhm @ 50A, 10V 4V @ 250µA 109nC @ 10V 6800pF @ 25V 10V ±20V
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