3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTA1R4N100P
Per Unit
$1.14
RFQ
34,100
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 1.4A TO-263 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 63W (Tc) N-Channel - 1000V 1.4A (Tc) 11 Ohm @ 500mA, 10V 4.5V @ 50µA 17.8nC @ 10V 450pF @ 25V 10V ±20V
IXTY1R4N100P
Per Unit
$1.07
RFQ
79,220
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 1.4A TO-252 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 63W (Tc) N-Channel - 1000V 1.4A (Tc) 11 Ohm @ 500mA, 10V 4.5V @ 50µA 17.8nC @ 10V 450pF @ 25V 10V ±20V
IXTP1R4N100P
Per Unit
$1.07
RFQ
63,440
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1000V 1.4A TO-220 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 63W (Tc) N-Channel - 1000V 1.4A (Tc) 11 Ohm @ 500mA, 10V 4.5V @ 50µA 17.8nC @ 10V 450pF @ 25V 10V ±20V
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