Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFN72N55Q2
Per Unit
$18.21
RFQ
72,660
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 550V 72A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 890W (Tc) N-Channel - 550V 72A (Tc) 72 mOhm @ 500mA, 10V 5V @ 8mA 258nC @ 10V 10500pF @ 25V 10V ±30V
IXFN170N30P
Per Unit
$16.09
RFQ
15,600
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 300V 138A SOT-227B Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 890W (Tc) N-Channel - 300V 138A (Tc) 18 mOhm @ 85A, 10V 4.5V @ 1mA 258nC @ 10V 20000pF @ 25V 10V ±20V
IXFB72N55Q2
Per Unit
$15.16
RFQ
50,100
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 550V 72A PLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 890W (Tc) N-Channel - 550V 72A (Tc) 72 mOhm @ 500mA, 10V 5V @ 8mA 258nC @ 10V 10500pF @ 25V 10V ±30V
IXFB170N30P
Per Unit
$11.56
RFQ
60,980
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH TO-264 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1250W (Tc) N-Channel - 300V 170A (Tc) 18 mOhm @ 85A, 10V 4.5V @ 1mA 258nC @ 10V 20000pF @ 25V 10V ±20V
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