Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
12,200
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IXYS MOSFET N-CH 800V 9A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 150W (Tc) N-Channel - 800V 9A (Tc) 650 mOhm @ 8A, 10V 5V @ 4mA 71nC @ 10V 4600pF @ 25V 10V ±30V
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Per Unit
$7.64
RFQ
38,540
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IXYS MOSFET N-CH 800V 25A ISOPLUS220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ - N-Channel Super Junction 800V 25A (Tc) 150 mOhm @ 18A, 10V 4V @ 2mA 180nC @ 10V 4600pF @ 25V 10V ±20V
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