Drive Voltage (Max Rds On, Min Rds On) :
31 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
57,420
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GeneSiC Semiconductor TRANS SJT 650V 16A TO276 - Obsolete Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Surface Mount TO-276AA TO-276 330W (Tc) - 650V 16A (Tc) (155°C) 105 mOhm @ 16A - - 1534pF @ 35V - -
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RFQ
65,780
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GeneSiC Semiconductor TRANS SJT 650V 15A TO-257 - Obsolete Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-257-3 TO-257 172W (Tc) - 650V 15A (Tc) (155°C) 105 mOhm @ 15A - - 1534pF @ 35V - -
2N7638-GA
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RFQ
48,300
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GeneSiC Semiconductor TRANS SJT 650V 8A TO276 - Obsolete Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Surface Mount TO-276AA TO-276 200W (Tc) - 650V 8A (Tc) (158°C) 170 mOhm @ 8A - - 720pF @ 35V - -
2N7637-GA
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RFQ
39,520
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GeneSiC Semiconductor TRANS SJT 650V 7A TO-257 - Obsolete Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-257-3 TO-257 80W (Tc) - 650V 7A (Tc) (165°C) 170 mOhm @ 7A - - 720pF @ 35V - -
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RFQ
77,080
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GeneSiC Semiconductor TRANS SJT 650V 4A TO276 - Obsolete Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Surface Mount TO-276AA TO-276 125W (Tc) - 650V 4A (Tc) (165°C) 415 mOhm @ 4A - - 324pF @ 35V - -
2N7635-GA
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RFQ
12,420
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GeneSiC Semiconductor TRANS SJT 650V 4A TO-257 - Obsolete Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-257-3 TO-257 47W (Tc) - 650V 4A (Tc) (165°C) 415 mOhm @ 4A - - 324pF @ 35V - -
GA16JT17-247
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RFQ
58,320
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GeneSiC Semiconductor TRANS SJT 1700V 16A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 282W (Tc) - 1700V 16A (Tc) (90°C) 110 mOhm @ 16A - - - - -
GA50JT17-247
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RFQ
48,800
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GeneSiC Semiconductor TRANS SJT 1.7KV 100A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247 583W (Tc) - 1700V 100A (Tc) 25 mOhm @ 50A - - - - -
GA20JT12-247
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RFQ
59,460
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GeneSiC Semiconductor TRANS SJT 1.2KV 20A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 282W (Tc) - 1200V 20A (Tc) 70 mOhm @ 20A - - - - -
GA10JT12-247
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RFQ
54,540
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GeneSiC Semiconductor TRANS SJT 1.2KV 10A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 170W (Tc) - 1200V 10A (Tc) 140 mOhm @ 10A - - - - -
GA05JT12-247
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RFQ
73,320
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GeneSiC Semiconductor TRANS SJT 1200V 5A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 106W (Tc) - 1200V 5A (Tc) 280 mOhm @ 5A - - - - -
GA06JT12-247
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RFQ
30,500
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GeneSiC Semiconductor TRANS SJT 1200V 6A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB - - 1200V 6A (Tc) (90°C) 220 mOhm @ 6A - - - - -
GA03JT12-247
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RFQ
27,300
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GeneSiC Semiconductor TRANS SJT 1200V 3A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 15W (Tc) - 1200V 3A (Tc) (95°C) 460 mOhm @ 3A - - - - -
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Per Unit
$352.25
RFQ
33,320
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GeneSiC Semiconductor TRANS SJT 600V 100A - Active Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-258-3, TO-258AA TO-258 769W (Tc) - 600V 100A (Tc) 25 mOhm @ 50A - - - - -
IXFN70N120SK
Per Unit
$58.96
RFQ
41,660
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IXYS MOSFET N-CH - Active - SiC (Silicon Carbide Junction Transistor) -40°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B - N-Channel 1200V 68A (Tc) 34 mOhm @ 50A, 20V 4V @ 15mA 161nC @ 20V 2790pF @ 1000V 20V +20V, -5V
IXFN50N120SIC
Per Unit
$35.34
RFQ
68,780
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IXYS MOSFET N-CH - Active - SiC (Silicon Carbide Junction Transistor) -40°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B - N-Channel 1200V 47A (Tc) 50 mOhm @ 40A, 20V 2.2V @ 2mA 100nC @ 20V 1900pF @ 1000V 20V +20V, -5V
IXFN50N120SK
Per Unit
$34.30
RFQ
51,340
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IXYS MOSFET N-CH - Active - SiC (Silicon Carbide Junction Transistor) -40°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B - N-Channel 1200V 48A (Tc) 52 mOhm @ 40A, 20V 2.8V @ 10mA 115nC @ 20V 1895pF @ 1000V 20V +20V, -5V
GA20SICP12-247
Per Unit
$21.44
RFQ
46,060
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GeneSiC Semiconductor TRANS SJT 1200V 45A TO247 - Active Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AB 282W (Tc) - 1200V 45A (Tc) 50 mOhm @ 20A - - 3091pF @ 800V - -
GA10SICP12-263
Per Unit
$14.44
RFQ
17,280
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GeneSiC Semiconductor TRANS SJT 1200V 25A TO263-7 - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK (7-Lead) 170W (Tc) - 1200V 25A (Tc) 100 mOhm @ 10A - - 1403pF @ 800V - -
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Per Unit
$6.38
RFQ
43,080
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Cree/Wolfspeed 1000V, 65 MOHM, G3 SIC MOSFET C3M™ Active Tape & Reel (TR) SiC (Silicon Carbide Junction Transistor) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-7 113.5W (Tc) N-Channel 1000V 35A (Tc) 78 mOhm @ 20A, 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V 15V +15V, -4V
GA100JT17-227
Per Unit
$156.07
RFQ
34,840
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GeneSiC Semiconductor TRANS SJT 1700V 160A SOT227 - Not For New Designs Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - 1700V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
GA100JT12-227
Per Unit
$101.53
RFQ
67,520
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GeneSiC Semiconductor TRANS SJT 1200V 160A SOT227 - Active Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - 1200V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
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Per Unit
$6.65
RFQ
21,480
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Cree/Wolfspeed 1200V, 75 MOHM, G3 SIC MOSFET ON C3M™ Active Tape & Reel (TR) SiC (Silicon Carbide Junction Transistor) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-7 113.6W (Tc) N-Channel 1200V 30A (Tc) 90 mOhm @ 20A, 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V 15V +15V, -4V
GA05JT03-46
Per Unit
$38.66
RFQ
21,960
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GeneSiC Semiconductor TRANS SJT 300V 9A - Active Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-46-3 TO-46 20W (Tc) - 300V 9A (Tc) 240 mOhm @ 5A - - - - -
GA05JT01-46
Per Unit
$32.33
RFQ
42,400
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GeneSiC Semiconductor TRANS SJT 100V 9A - Active Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-46-3 TO-46 20W (Tc) - 100V 9A (Tc) 240 mOhm @ 5A - - - - -
GA04JT17-247
Per Unit
$16.92
RFQ
70,020
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GeneSiC Semiconductor TRANS SJT 1700V 4A TO-247AB - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 106W (Tc) - 1700V 4A (Tc) (95°C) 480 mOhm @ 4A - - - - -
GA08JT17-247
Per Unit
$28.76
RFQ
65,900
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GeneSiC Semiconductor TRANS SJT 1700V 8A TO-247AB - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 48W (Tc) - 1700V 8A (Tc) (90°C) 250 mOhm @ 8A - - - - -
GA50JT12-247
Per Unit
$59.94
RFQ
19,220
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GeneSiC Semiconductor TRANS SJT 1.2KV 50A - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 583W (Tc) - 1200V 100A (Tc) 25 mOhm @ 50A - - 7209pF @ 800V - -
GA20JT12-263
Per Unit
$21.06
RFQ
74,980
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GeneSiC Semiconductor TRANS SJT 1200V 45A - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK (7-Lead) 282W (Tc) - 1200V 45A (Tc) 60 mOhm @ 20A - - 3091pF @ 800V - -
GA10JT12-263
Per Unit
$11.58
RFQ
41,180
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GeneSiC Semiconductor TRANS SJT 1200V 25A - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Surface Mount - - 170W (Tc) - 1200V 25A (Tc) 120 mOhm @ 10A - - 1403pF @ 800V - -
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