Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STE48NM60
GET PRICE
RFQ
49,160
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STMicroelectronics MOSFET N-CH 650V 48A ISOTOP MDmesh™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Chassis Mount ISOTOP ISOTOP® 450W (Tc) N-Channel - 650V 48A (Tc) 110 mOhm @ 22.5A, 10V 5V @ 250µA 134nC @ 10V 3800pF @ 25V 10V ±30V
STE145N65M5
Per Unit
$35.19
RFQ
19,480
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STMicroelectronics MOSFET N-CH 650V 143A ISOTOP MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Chassis Mount ISOTOP ISOTOP® 679W (Tc) N-Channel - 650V 143A (Tc) 15 mOhm @ 69A, 10V 5V @ 250µA 414nC @ 10V 18500pF @ 100V 10V ±25V
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