Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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23,160
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Microsemi Corporation MOSFET N-CH 800V 40A ISOTOP POWER MOS IV® Obsolete Tray MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 690W (Tc) N-Channel - 800V 40A (Tc) 180 mOhm @ 20A, 10V 4V @ 5mA 700nC @ 10V 14000pF @ 25V 10V ±30V
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RFQ
76,720
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Microsemi Corporation MOSFET N-CH 500V 43A ISOTOP POWER MOS IV® Obsolete Tray MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 520W (Tc) N-Channel - 500V 43A (Tc) 120 mOhm @ 21.5A, 10V 4V @ 2.5mA 370nC @ 10V 6500pF @ 25V 10V ±30V
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RFQ
77,520
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Microsemi Corporation MOSFET N-CH 400V 56A ISOTOP POWER MOS IV® Obsolete Tray MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 520W (Tc) N-Channel - 400V 56A (Tc) 75 mOhm @ 28A, 10V 4V @ 2.5mA 370nC @ 10V 6800pF @ 25V 10V ±30V
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RFQ
35,820
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Microsemi Corporation MOSFET N-CH 400V 86A ISOTOP POWER MOS IV® Obsolete Tray MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 690W (Tc) N-Channel - 400V 86A (Tc) 42 mOhm @ 43A, 10V 4V @ 5mA 760nC @ 10V 14000pF @ 25V 10V ±30V
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