Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHD110NQ03LT,118
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RFQ
63,620
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NXP USA Inc. MOSFET N-CH 25V 75A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 115W (Tc) N-Channel 25V 75A (Tc) 4.6 mOhm @ 25A, 10V 2V @ 1mA 26.7nC @ 5V 2200pF @ 25V 5V, 10V ±20V
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$0.20
RFQ
29,240
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ON Semiconductor T6 40V DPAK EXPANSION AND Automotive, AEC-Q101 Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 3W (Ta), 47W (Tc) N-Channel 40V 18A (Ta), 73A (Tc) 4.6 mOhm @ 25A, 10V 2.2V @ 60µA 36nC @ 10V 2100pF @ 25V 4.5V, 10V ±20V
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