Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCD1300N80Z
GET PRICE
RFQ
35,020
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 800V 4A TO252 SuperFET® II Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 52W (Tc) N-Channel - 800V 4A (Tc) 1.3 Ohm @ 2A, 10V 4.5V @ 400µA 21nC @ 10V 880pF @ 100V 10V ±20V
FCD1300N80Z
GET PRICE
RFQ
14,400
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 800V 4A TO252 SuperFET® II Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 52W (Tc) N-Channel - 800V 4A (Tc) 1.3 Ohm @ 2A, 10V 4.5V @ 400µA 21nC @ 10V 880pF @ 100V 10V ±20V
FCD1300N80Z
Per Unit
$0.40
RFQ
24,440
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 800V 4A TO252 SuperFET® II Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 52W (Tc) N-Channel - 800V 4A (Tc) 1.3 Ohm @ 2A, 10V 4.5V @ 400µA 21nC @ 10V 880pF @ 100V 10V ±20V
TK8P60W5,RVQ
GET PRICE
RFQ
68,600
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 8A DPAK DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 600V 8A (Ta) 560 mOhm @ 4A, 10V 4.5V @ 400µA 22nC @ 10V 590pF @ 300V 10V ±30V
TK8P60W5,RVQ
Per Unit
$0.96
RFQ
65,080
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 8A DPAK DTMOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 600V 8A (Ta) 560 mOhm @ 4A, 10V 4.5V @ 400µA 22nC @ 10V 590pF @ 300V 10V ±30V
TK8P60W5,RVQ
Per Unit
$0.37
RFQ
65,980
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 8A DPAK DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel - 600V 8A (Ta) 560 mOhm @ 4A, 10V 4.5V @ 400µA 22nC @ 10V 590pF @ 300V 10V ±30V
Page 1 / 1