Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
R6025ANZC8
Per Unit
$3.23
RFQ
17,060
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 25A TO3PF - Not For New Designs Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 150W (Tc) N-Channel 600V 25A (Tc) 150 mOhm @ 12.5A, 10V 4.5V @ 1mA 88nC @ 10V 3250pF @ 10V 10V ±20V
R6025FNZC8
Per Unit
$3.23
RFQ
24,600
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 25A TO3PF - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 150W (Tc) N-Channel 600V 25A (Tc) 180 mOhm @ 12.5A, 10V 5V @ 1mA 85nC @ 10V 3500pF @ 25V 10V ±30V
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