Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
73,580
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ON Semiconductor MOSFET N-CH 250V 21.7A TO-3PF - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 100W (Tc) N-Channel - 250V 21.7A (Tc) 85 mOhm @ 10.9A, 10V 5V @ 250µA 80nC @ 10V 2750pF @ 25V 10V ±30V
FQAF11N90C
Per Unit
$2.36
RFQ
29,420
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ON Semiconductor MOSFET N-CH 900V 7A TO-3PF QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 120W (Tc) N-Channel - 900V 7A (Tc) 1.1 Ohm @ 3.5A, 10V 5V @ 250µA 80nC @ 10V 3290pF @ 25V 10V ±30V
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