Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
45,080
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ON Semiconductor MOSFET N-CH 500V 7.2A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 90W (Tc) N-Channel - 500V 7.2A (Tc) 730 mOhm @ 3.6A, 10V 5V @ 250µA 36nC @ 10V 1450pF @ 25V 10V ±30V
STFW20N65M5
Per Unit
$1.22
RFQ
66,960
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STMicroelectronics MOSFET N-CH 650V 18A TO-3PF MDmesh™ M5 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 48W (Tc) N-Channel - 650V 18A (Tc) 190 mOhm @ 9A, 10V 5V @ 250µA 36nC @ 10V 1434pF @ 100V 10V ±25V
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