Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
GET PRICE
RFQ
15,600
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 800V 5.9A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 107W (Tc) N-Channel - 800V 5.9A (Tc) 1.2 Ohm @ 2.95A, 10V 5V @ 250µA 57nC @ 10V 2350pF @ 25V 10V ±30V
STFW40N60M2
Per Unit
$5.40
RFQ
37,880
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 34A TO-3PF MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 63W (Tc) N-Channel - 600V 34A (Tc) 88 mOhm @ 17A, 10V 4V @ 250µA 57nC @ 10V 2500pF @ 100V 10V ±25V
Page 1 / 1