Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQAF13N80
Per Unit
$2.86
RFQ
52,160
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 800V 8A TO-3PF QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 120W (Tc) N-Channel 800V 8A (Tc) 750 mOhm @ 4A, 10V 5V @ 250µA 88nC @ 10V 3500pF @ 25V 10V ±30V
R6025ANZC8
Per Unit
$3.23
RFQ
17,060
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 25A TO3PF - Not For New Designs Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 150W (Tc) N-Channel 600V 25A (Tc) 150 mOhm @ 12.5A, 10V 4.5V @ 1mA 88nC @ 10V 3250pF @ 10V 10V ±20V
Page 1 / 1