Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STI175N4F6AG
Per Unit
$0.48
RFQ
15,820
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 40V 120A I2PAK STripFET™ F6 Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 190W (Tc) N-Channel - 40V 120A (Tc) 2.7 mOhm @ 60A, 10V 4.5V @ 250µA 130nC @ 10V 7735pF @ 20V 10V ±20V
STI33N60M2
Per Unit
$2.85
RFQ
29,240
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 26A I2PAK MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 190W (Tc) N-Channel - 600V 26A (Tc) 125 mOhm @ 13A, 10V 4V @ 250µA 45.5nC @ 10V 1781pF @ 100V 10V ±25V
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