Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQI3N90TU
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RFQ
71,360
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ON Semiconductor MOSFET N-CH 900V 3.6A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 130W (Tc) N-Channel - 900V 3.6A (Tc) 4.25 Ohm @ 1.8A, 10V 5V @ 250µA 26nC @ 10V 910pF @ 25V 10V ±30V
FQI6N50TU
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RFQ
61,320
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ON Semiconductor MOSFET N-CH 500V 5.5A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 130W (Tc) N-Channel - 500V 5.5A (Tc) 1.3 Ohm @ 2.8A, 10V 5V @ 250µA 22nC @ 10V 790pF @ 25V 10V ±30V
FQI4N80TU
Per Unit
$1.22
RFQ
30,460
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ON Semiconductor MOSFET N-CH 800V 3.9A I2PAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 130W (Tc) N-Channel - 800V 3.9A (Tc) 3.6 Ohm @ 1.95A, 10V 5V @ 250µA 25nC @ 10V 880pF @ 25V 10V ±30V
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