- Manufacture :
- Part Status :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
75,500
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|
ON Semiconductor | MOSFET N-CH 60V 120A I2PAK | PowerTrench® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 231W (Tc) | N-Channel | - | 60V | 120A (Tc) | 4 mOhm @ 75A, 10V | 4.5V @ 250µA | 133nC @ 10V | 8235pF @ 25V | 10V | ±20V | ||
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GET PRICE |
34,480
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 100V 120A I2PAK-3 | PowerTrench® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 263W (Tc) | N-Channel | - | 100V | 120A (Tc) | 4.5 mOhm @ 100A, 10V | 4V @ 250µA | 74nC @ 10V | 5270pF @ 50V | 10V | ±20V | ||
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15,820
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|
STMicroelectronics | MOSFET N-CH 40V 120A I2PAK | STripFET™ F6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 190W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.7 mOhm @ 60A, 10V | 4.5V @ 250µA | 130nC @ 10V | 7735pF @ 20V | 10V | ±20V | |||
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42,000
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|
ON Semiconductor | MOSFET N-CH 60V 120A I2PAK | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 231W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.2 mOhm @ 75A, 10V | 4.5V @ 250µA | 151nC @ 10V | 9815pF @ 25V | 10V | ±20V | |||
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16,200
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|
ON Semiconductor | MOSFET N-CH 100V 120A I2PAK-3 | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 263W (Tc) | N-Channel | - | 100V | 120A (Tc) | 4.5 mOhm @ 100A, 10V | 4V @ 250µA | 74nC @ 10V | 5270pF @ 50V | 10V | ±20V | |||
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40,680
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|
STMicroelectronics | MOSFET N-CH 40V 120A I2PAK | DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 300W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.7 mOhm @ 60A, 10V | 4.5V @ 250µA | 377nC @ 10V | 20000pF @ 25V | 10V | ±20V | |||
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49,800
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|
STMicroelectronics | MOSFET N-CH 40V 120A I2PAK | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 300W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.8 mOhm @ 60A, 10V | 4.5V @ 250µA | 340nC @ 10V | 17930pF @ 25V | 10V | ±20V |
