Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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58,120
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ON Semiconductor MOSFET N-CH 40V 26A TO-262AB Automotive, AEC-Q101, PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 300W (Tc) N-Channel - 40V 26A (Ta), 80A (Tc) 4.7 mOhm @ 80A, 10V 4V @ 250µA 280nC @ 10V 15000pF @ 25V 10V ±20V
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52,960
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ON Semiconductor MOSFET N-CH 75V 80A TO-262AB PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 310W (Tc) N-Channel - 75V 80A (Tc) 4.7 mOhm @ 80A, 10V 4V @ 250µA 138nC @ 10V 6600pF @ 25V 6V, 10V ±20V
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