- Manufacture :
- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
77,580
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|
ON Semiconductor | MOSFET N-CH 500V 9A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 147W (Tc) | N-Channel | - | 500V | 9A (Tc) | 730 mOhm @ 4.5A, 10V | 5V @ 250µA | 36nC @ 10V | 1450pF @ 25V | 10V | ±30V | ||
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74,940
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|
STMicroelectronics | MOSFET N-CH 600V 22A I2PAK | MDmesh™ M2 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 170W (Tc) | N-Channel | - | 600V | 22A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 36nC @ 10V | 1440pF @ 100V | 10V | ±25V | |||
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38,600
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|
ON Semiconductor | MOSFET N-CH 600V 7.5A I2PAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 147W (Tc) | N-Channel | - | 600V | 7.5A (Tc) | 1.2 Ohm @ 3.75A, 10V | 4V @ 250µA | 36nC @ 10V | 1255pF @ 25V | 10V | ±30V |
