Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQI6N60CTU
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RFQ
71,820
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ON Semiconductor MOSFET N-CH 600V 5.5A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 125W (Tc) N-Channel - 600V 5.5A (Tc) 2 Ohm @ 2.75A, 10V 4V @ 250µA 20nC @ 10V 810pF @ 25V 10V ±30V
FQI6N40CTU
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RFQ
33,380
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ON Semiconductor MOSFET N-CH 400V 6A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 73W (Tc) N-Channel - 400V 6A (Tc) 1 Ohm @ 3A, 10V 4V @ 250µA 20nC @ 10V 625pF @ 25V 10V ±30V
FQI2NA90TU
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RFQ
68,540
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ON Semiconductor MOSFET N-CH 900V 2.8A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 107W (Tc) N-Channel - 900V 2.8A (Tc) 5.8 Ohm @ 1.4A, 10V 5V @ 250µA 20nC @ 10V 680pF @ 25V 10V ±30V
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