Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STI12NM50N
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RFQ
55,320
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 500V 11A I2PAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 100W (Tc) N-Channel - 500V 11A (Tc) 380 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V 940pF @ 50V 10V ±25V
STI13NM60N
Per Unit
$1.69
RFQ
23,320
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STMicroelectronics MOSFET N-CH 600V 11A I2PAK MDmesh™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 90W (Tc) N-Channel - 600V 11A (Tc) 360 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V 790pF @ 50V 10V ±25V
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