Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RJL6012DPE-00#J3
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RFQ
68,800
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Renesas Electronics America MOSFET N-CH 600V 10A LDPAK - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 100W (Tc) N-Channel 600V 10A (Ta) 1.1 Ohm @ 5A, 10V 28nC @ 10V 1050pF @ 25V 10V ±30V
RJK6012DPE-00#J3
Per Unit
$0.84
RFQ
78,060
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Renesas Electronics America MOSFET N-CH 600V 10A LDPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 100W (Tc) N-Channel 600V 10A (Ta) 920 mOhm @ 5A, 10V 30nC @ 10V 1100pF @ 25V 10V ±30V
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