Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
2SK2315TYTR-E
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RFQ
78,240
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Renesas Electronics America MOSFET N-CH 60V 2A 4-UPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-243AA UPAK 1W (Ta) N-Channel 60V 2A (Ta) 450 mOhm @ 1A, 4V - 173pF @ 10V 3V, 4V ±20V
RQK0607AQDQS#H1
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75,240
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Renesas Electronics America MOSFET N-CH - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-243AA UPAK 1.5W (Ta) N-Channel 60V 2.4A (Ta) 270 mOhm @ 1.2A, 4.5V 2nC @ 4.5V 170pF @ 10V 2.5V, 4.5V ±12V
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