- Manufacture :
- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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78,480
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|
ON Semiconductor | MOSFET N-CH 1500V 2.5A TO3PF3 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) | 3W (Ta), 50W (Tc) | N-Channel | - | 1500V | 2.5A (Ta) | 10.5 Ohm @ 1.25A, 10V | - | 34nC @ 10V | 650pF @ 30V | 10V | ±30V | |||
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GET PRICE |
56,940
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 50A TO-3P(L) | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) | 250W (Tc) | N-Channel | - | 500V | 50A (Ta) | 95 mOhm @ 25A, 10V | 3.4V @ 1mA | 280nC @ 10V | 11000pF @ 10V | 10V | ±30V | ||
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13,100
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|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 100A TO3P(L) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) | 797W (Tc) | N-Channel | Super Junction | 600V | 100A (Ta) | 18 mOhm @ 50A, 10V | 3.7V @ 5mA | 360nC @ 10V | 15000pF @ 30V | 10V | ±30V | |||
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13,240
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|
ON Semiconductor | MOSFET N-CH 1500V 2.5A TO3P3 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) | 2.5W (Ta), 140W (Tc) | N-Channel | - | 1500V | 2.5A (Ta) | 10.5 Ohm @ 1.25A, 10V | - | 34nC @ 10V | 650pF @ 30V | 10V | ±30V |
