Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SFU9220TU_F080
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RFQ
57,500
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ON Semiconductor MOSFET P-CH 200V 3.1A IPAK - Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 2.5W (Ta), 30W (Tc) P-Channel - 200V 3.1A (Tc) 1.5 Ohm @ 1.6A, 10V 4V @ 250µA 19nC @ 10V 540pF @ 25V 10V ±30V
SFU9220TU_AM002
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RFQ
20,640
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ON Semiconductor MOSFET P-CH 200V 3.1A IPAK - Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 2.5W (Ta), 30W (Tc) P-Channel - 200V 3.1A (Tc) 1.5 Ohm @ 1.6A, 10V 4V @ 250µA 19nC @ 10V 540pF @ 25V 10V ±30V
AOU7S65
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RFQ
74,160
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 7A TO251 aMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 89W (Tc) N-Channel - 600V 7A (Tc) 650 mOhm @ 3.5A, 10V 4V @ 250µA 9.2nC @ 10V 434pF @ 100V 10V ±30V
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