4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$0.59
RFQ
25,080
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Vishay Siliconix MOSFET N-CH 150V 53.7A SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 104W (Tc) N-Channel - 150V 53.7A (Tc) 18 mOhm @ 20A, 10V 4.5V @ 250µA 47nC @ 10V 1286pF @ 75V 7.5V, 10V ±20V
SIR872ADP-T1-GE3
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RFQ
59,440
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Vishay Siliconix MOSFET N-CH 150V 53.7A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 150V 53.7A (Tc) 18 mOhm @ 20A, 10V 4.5V @ 250µA 47nC @ 10V 1286pF @ 75V 7.5V, 10V ±20V
SIR872ADP-T1-GE3
Per Unit
$1.06
RFQ
33,700
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Vishay Siliconix MOSFET N-CH 150V 53.7A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 150V 53.7A (Tc) 18 mOhm @ 20A, 10V 4.5V @ 250µA 47nC @ 10V 1286pF @ 75V 7.5V, 10V ±20V
SIR872ADP-T1-GE3
Per Unit
$0.45
RFQ
55,020
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 150V 53.7A PPAK SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 150V 53.7A (Tc) 18 mOhm @ 20A, 10V 4.5V @ 250µA 47nC @ 10V 1286pF @ 75V 7.5V, 10V ±20V
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