- Packaging :
- Drive Voltage (Max Rds On, Min Rds On) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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22,140
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|
Vishay Siliconix | MOSFET N-CH 60V 9.6A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 60V | 9.6A (Ta) | 11 mOhm @ 12A, 10V | 4V @ 250µA | 57nC @ 10V | - | 6V, 10V | ±20V | ||
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69,200
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|
Vishay Siliconix | MOSFET N-CH 60V 9.6A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 60V | 9.6A (Ta) | 11 mOhm @ 12A, 10V | 4V @ 250µA | 57nC @ 10V | - | 6V, 10V | ±20V | |||
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40,980
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CH 60V 9.6A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 60V | 9.6A (Ta) | 11 mOhm @ 12A, 10V | 4V @ 250µA | 57nC @ 10V | - | 6V, 10V | ±20V | |||
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56,140
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CH 60V 9.6A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 60V | 9.6A (Ta) | 11 mOhm @ 12A, 10V | 4V @ 250µA | 57nC @ 10V | - | 10V | ±20V |
